MOSFET snapback sustaining and breakover voltage as a function of... | Download Scientific Diagram
Snapback avoidance design flow for a memory technology - ppt video online download
MOSFET snapback sustaining and breakover voltage as a function of... | Download Scientific Diagram
What does good ESD protection look like? | Efficiency Wins
Impact from IC On-Chip Protection Design on EOS - In Compliance Magazine
The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness
High-current snapback characteristics of MOSFETs - Electron Devices, IEEE Transactions on
Snapback behavior determines ESD protection effectiveness - SemiWiki
PDF) Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
The impact of MOSFET technology evolution and scaling on electrostatic discharge protection - ScienceDirect
Snapback curves of a NMOS w/ a gate resistor (lines: simulation,... | Download Scientific Diagram
Figure 1 from Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models | Semantic Scholar
Figure 4 from Effect Of body bias and temperature on snapback for a SOI-LDMOS transistor | Semantic Scholar
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | SpringerLink
Junction temperature induced thermal snapback breakdown of MOSFET device | Semantic Scholar
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
MOSFET snapback sustaining and breakover voltage as a function of... | Download Scientific Diagram
MODELING NMOS SNAPBACK CHARACTERISTIC USING PSPICE 1. Introduction 2. NMOS SNAPBACK
Figure 1 from Snapback Breakdown Dynamics and ESD Susceptibility of LDMOS | Semantic Scholar
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | SpringerLink
Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation
a) Schematic cross section of a grounded-gate nMOS transistor. The... | Download Scientific Diagram
